Field-effect transistor, single-electron transistor and sensor using the same
US8502277B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 27, 2004 |
| Grant date | Aug 6, 2013 |
| Priority date | — |
| Expiry date | Nov 13, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/514
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A sensor capable of detecting detection targets that are necessary to be detected with high sensitivity is provided.It comprises a field-effect transistor 1A having a substrate 2, a source electrode 4 and a drain electrode 5 provided on said substrate 2, and a channel 6 forming a current path between said source electrode 4 and said drain electrode 5; wherein said field-effect transistor 1A comprises:an interaction-sensing gate 9 for immobilizing thereon a specific substance 10 that is capable of selectively interacting with the detection targets; anda gate 7 applied a voltage thereto so as to detect the interaction by the change of the characteristic of said field-effect transistor 1A.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.