Double gate transistor and method of fabricating the same

US8502289B2 · kind B2 · utility

Assignee

• Semiconductor Manufacturing International (Beijing) Corporation · CN

Inventors

• Xinpeng Wang · Singapore, SG
• Haiyang Zhang · Shanghai, CN

Key dates

• Filing date: Dec 13, 2011
• Grant date: Aug 6, 2013
• Expiry date: Dec 13, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/792

Abstract

The present invention discloses a double gate transistor and a method of fabricating said transistor, said transistor comprising: a semiconductor layer on a substrate; a fin structure formed in said semiconductor layer, said fin structure having two end portions for forming source and drain regions and a middle portion between said two end portions for forming a channel region, said middle portion including two opposed side surfaces perpendicular to a substrate surface; a first gate dielectric layer and a first gate disposed on one side surface of said middle portion; and a second gate dielectric layer and a second gate disposed on the other side surface of said middle portion.