Patent · US Active

Double layer metal (DLM) power MOSFET

US8502313B2 · kind B2 · utility

1Cited by
7References
23Claims
0Family size

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Inventors

Key dates

Filing dateApr 21, 2011
Grant dateAug 6, 2013
Priority date—
Expiry dateFeb 1, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D18/655
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

This document discusses, among other things, a semiconductor device including a first metal layer coupled to a source region and a second metal layer coupled to a gate structure, wherein at least a portion of the first and second metal layers overlap vertically.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.