Through-substrate via waveguides
US8502338B2 · kind B2 · utility
8Cited by
37References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 9, 2010 |
| Grant date | Aug 6, 2013 |
| Priority date | — |
| Expiry date | Aug 5, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device includes a semiconductor substrate of a first conductivity type, wherein the semiconductor substrate comprises a first surface and a second surface opposite the first surface. A through-substrate via (TSV) extends from the first surface to the second surface of the semiconductor substrate. A well region of a second conductivity type opposite the first conductivity type encircles the TSV, and extends from the first surface to the second surface of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.