Trench-type capacitor, semiconductor device having the same, and semiconductor module having the semiconductor device
US8502341B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 4, 2011 |
| Grant date | Aug 6, 2013 |
| Priority date | — |
| Expiry date | Apr 20, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/62
Abstract
Provided is a trench-type capacitor. To form the capacitor, first and second active regions are disposed in a semiconductor substrate. Node patterns are disposed in the first active region. Each node pattern may have a conductive pattern and an insulating pattern, which are sequentially stacked. Impurity diffusion regions are disposed in the vicinity of the node patterns. Substrate connection patterns in electrical contact with the first and second active regions are disposed. Node connection patterns in electrical contact with the node patterns are disposed in the vicinity of the first and second active regions. In addition, a semiconductor device having the trench-type capacitor and a semiconductor module having the semiconductor device is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.