Semiconductor device
US8502344B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 26, 2009 |
| Grant date | Aug 6, 2013 |
| Priority date | — |
| Expiry date | Apr 25, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/142
Abstract
A lateral high-breakdown voltage semiconductor device is provided in which the breakdown voltages of elements as a whole are improved, while suppressing increases in cell area. A track-shape gate electrode surrounds a collector electrode extending in a straight line, a track-shape emitter electrode surrounds the gate electrode, and a track-shape first isolation trench surrounds the emitter electrode. A second isolation trench surrounds the first isolation trench. The region between the first isolation trench and the second isolation trench is an n-type isolation silicon region. The isolation silicon region is at the same potential as the emitter electrode. In the cross-sectional configuration traversing the gate electrode, the depth of the p base region in an interval corresponding to an arc-shape portion of the gate electrode is shallower than the depth of the p base region in an interval corresponding to a straight-line portion of the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.