High efficiency driving circuit
US8502570B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 8, 2011 |
| Grant date | Aug 6, 2013 |
| Priority date | — |
| Expiry date | Apr 18, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0063
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A high efficiency driving circuit includes a first P-type metal-oxide-semiconductor transistor, a second P-type metal-oxide-semiconductor transistor, a first N-type metal-oxide-semiconductor transistor, a second N-type metal-oxide-semiconductor transistor, a current source, a third N-type metal-oxide-semiconductor transistor, a fourth N-type metal-oxide-semiconductor transistor, a fifth N-type metal-oxide-semiconductor transistor, a first resistor, and a second resistor. The first P-type metal-oxide-semiconductor transistor charges a third terminal of the first P-type metal-oxide-semiconductor transistor according to a first control signal, and the first N-type metal-oxide-semiconductor transistor discharges the third terminal of the first P-type metal-oxide-semiconductor transistor according to a second control signal. A high voltage level of the first control signal is at a first voltage, and a low voltage level of the first control signal is at a third voltage; a high voltage level of the second control signal is at a fourth voltage, and a low voltage level of the second control signal is ground.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.