Patent · US Active

Magnetic sensor with enhanced magnetoresistance ratio

US8503135B2 · kind B2 · utility

7Cited by
13References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 21, 2011
Grant dateAug 6, 2013
Priority date
Expiry dateSep 21, 2031

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/1193
  • WIPO fieldAudio-visual technology
  • WIPO sectorElectrical engineering

Abstract

Various embodiments of the present invention are generally directed to a magnetically responsive lamination that may be constructed with a spacer layer disposed between a first and second ferromagnetic free layer. At least one ferromagnetic free layer can have a coupling sub-layer that enhances magnetoresistance ratio (MR) of the magnetically responsive lamination.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.