Access method of non-volatile memory device
US8503230B2 · kind B2 · utility
13Cited by
7References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 19, 2009 |
| Grant date | Aug 6, 2013 |
| Priority date | — |
| Expiry date | May 7, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5634
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Disclosed is an access method of a non-volatile memory device which comprises detecting a threshold voltage variation of a first memory cell, the a threshold voltage variation of the first memory cell being capable of physically affecting a second memory cell; and assigning the second memory cell to a selected sub-distribution from among a plurality of sub-distributions according to a distance of the threshold voltage variation of the first memory cell, the plurality of sub-distributions corresponding to a target distribution of the second memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.