Apparatus for growth of dilute-nitride materials using an isotope for enhancing the sensitivity of resonant nuclear reaction analysis
US8505481B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 1, 2012 |
| Grant date | Aug 13, 2013 |
| Priority date | — |
| Expiry date | Jun 11, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In certain desirable embodiments, the present invention relates to the use of 15N isotopes into GaAsN, InAsN or GaSbN films for ion beam analysis. A semiconductor-nitride assembly for growing and analyzing crystal growth in a group III-V semiconductor sample that includes: a substrate; a buffer layer deposited on the substrate, a nitrogen gas injector to incorporate enriched nitrogen gas and the nitrogen gas injector includes a concentration of enriched nitrogen gas, a thin film consisting of at least one group III element containing compound where at least one group III element is covalently bonded with the nitrogen in the presence of the same or different group V element of the buffer layer, and a proton beam to analyze the incorporation of the nitrogen gas in the thin film layer is described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.