Substrate having a coating comprising copper and method for the production thereof by means of atomic layer deposition

US8507038B2 · kind B2 · utility

Assignees

• Fraunhofer-Gesellschaft zur förderung der angewandten Forschung e.V. · DE
• Technische Universität Chemnitz · DE

Inventors

• Thomas Waechtler · Kitzscher, DE
• Thomas Gessner · Plymouth, US
• Stefan Schulz · Berlin, DE
• Heinrich Lang · Ergersheim, DE
• Alexander Jakob · Bensheim, DE

Key dates

• Filing date: Jun 4, 2010
• Grant date: Aug 13, 2013
• Expiry date: Oct 10, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76898
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method can be used for the production of a coated substrate. The coating contains copper. A copper precursor and a substrate are provided. The copper precursor is a copper(I) complex which contains no fluorine. A copper-containing layer is deposited by means of atomic layer deposition (ALD) at least on partial regions of the substrate surface by using the precursor. Optionally, a reduction step is performed in which a reducing agent acts on the substrate obtained in the layer deposition step. In various embodiments, the precursor is a complex of the formula L2Cu(X∩X) in which L are identical or different σ-donor-π acceptor ligands and/or identical or different σ,π-donor-π acceptor ligands and X∩X is a bidentate ligand which is selected from the group consisting of β-diketonates, β-ketoiminates, β-diiminates, amidinates, carboxylates and thiocarboxylates.