Chemically amplified positive-type photoresist composition for thick film, chemically amplified dry film for thick film, and method for production of thick film resist pattern
US8507180B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 18, 2007 |
| Grant date | Aug 13, 2013 |
| Priority date | — |
| Expiry date | Feb 14, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0271
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed are a chemically amplified positive-type photoresist composition for a thick film, a chemically amplified dry film for a thick film, and a method for producing a thick film resist pattern, all of which are capable of obtaining a satisfactory resist pattern with high sensitivity even on a substrate having a portion formed of copper on an upper surface thereof. The chemically amplified positive-type photoresist composition for a thick film comprises component (A) which includes at least one compound capable of producing an acid upon irradiation with an actinic ray or radiation, and component (B) which includes at least one resin whose alkali solubility increases by the action of an acid, in which the component (A) includes an onium fluorinated alkyl fluorophosphate having a specific structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.