Separation of semiconductor devices
US8507367B2 · kind B2 · utility
0Cited by
6References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 3, 2008 |
| Grant date | Aug 13, 2013 |
| Priority date | — |
| Expiry date | Dec 13, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/841
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating semiconductor devices is disclosed. The method comprises providing a substrate with a plurality of epitaxial layers mounted on the substrate and separating the substrate from the plurality of epitaxial layers while the plurality of epitaxial layers is intact. This preserves the electrical, optical, and mechanical properties of the plurality of epitaxial layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.