Method for processing a thin film micro device on a substrate
US8507385B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 5, 2009 |
| Grant date | Aug 13, 2013 |
| Priority date | — |
| Expiry date | Nov 9, 2029 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C1/0015
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method for processing a thin film micro device on a substrate includes: 1) depositing a carbon film on the substrate as a sacrificial layer; 2) photolithographically defining a first predetermined pattern in the carbon film; 3) etching an unwanted portion of the carbon film outside the first predetermined pattern; 4) depositing a structural film including a single or multiple layers of solid state materials; 5) photolithographically defining a second predetermined pattern in the structural film; 6) etching the discarded portion of the structural film outside the second predetermined pattern; 7) selectively removing the remaining portion of the sacrificial carbon film by using a selective etch process gas in a reactor chamber, so that the overlapped portion of the remaining structural element with the first predetermined pattern is suspended above an underneath cavity above the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.