Method for producing a contact structure of a semiconductor component

US8507828B2 · kind B2 · utility

Assignee

• Deutsche Cell GmbH · DE

Inventors

• Andreas Krause · Frankfurt am Main, DE
• Bernd Bitnar · Freiberg, DE
• Holger Neuhaus · Birkenfeld, DE
• Frederick Bamberg · Freiberg, DE

Key dates

• Filing date: Jun 30, 2009
• Grant date: Aug 13, 2013
• Expiry date: Jun 13, 2032

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/50

Abstract

A method for the production of a contact structure of a semiconductor component comprises the masking of at least one side of a semiconductor substrate with a coating and the partial removal thereof in at least one pre-determined region.