Terahertz resonator
US8507860B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 20, 2010 |
| Grant date | Aug 13, 2013 |
| Priority date | — |
| Expiry date | Oct 15, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/21
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A tunable terahertz resonator includes a semiconductor substrate and a metal layer contacting a surface of the semiconductor substrate. A depletion layer is formed in the semiconductor substrate near an interface between the metal layer and the semiconductor substrate. A chiral nanostructure is coupled to the substrate or the metal layer, the chiral nanostructure including a conducting or semiconducting material and having an inductance. A bias circuit applies a bias voltage across the metal layer and the semiconductor substrate to control a capacitance of a tunable capacitor that includes the depletion layer. The chiral nanostructure and the tunable capacitor form a tunable resonant circuit. The tunable terahertz resonator can be used in a terahertz radiation emitter or receiver.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.