Nonvolatile memory device and method for manufacturing same
US8507888B2 · kind B2 · utility
2Cited by
2References
7Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 1, 2011 |
| Grant date | Aug 13, 2013 |
| Priority date | — |
| Expiry date | Sep 8, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8845
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
According to one embodiment, a nonvolatile memory device includes a selection element layer and a nanomaterial aggregate layer. The selection element layer includes silicon. The nanomaterial aggregate layer is stacked on the selection element layer. The nanomaterial aggregate layer includes a plurality of micro conductive bodies and fine particles dispersed in a plurality of gaps between the micro conductive bodies. At least a surface of the fine particle is made of an insulating material other than silicon oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.