Semiconductor memory device
US8507907B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 27, 2011 |
| Grant date | Aug 13, 2013 |
| Priority date | — |
| Expiry date | Jun 16, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02D10/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
It is to provide a semiconductor memory device in which high voltage is not needed in writing, a defect is less likely to occur, the writing time is short, and data cannot be rewritten without an increase in cost. The semiconductor memory device includes a memory element which includes a diode-connected first transistor, a second transistor whose gate is connected to one terminal of a source electrode and a drain electrode of the diode-connected first transistor, and a capacitor connected to the one terminal of the source electrode and the drain electrode of the diode-connected first transistor and the gate of the second transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.