Semiconductor device with high density optical chips and manufacturing method thereof
US8507927B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2010 |
| Grant date | Aug 13, 2013 |
| Priority date | — |
| Expiry date | Mar 14, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An aspect of the present invention provides a semiconductor device, in which densely packaging and high performance of optical elements are realized by a simple manufacturing process. The semiconductor device includes: a first chip module, a second chip module and a bonding layer. The first chip module includes a plurality of optical chips that are bonded within a substantially same plane with a first resin layer. The second chip module includes a plurality of control semiconductor chips and a plurality of connecting chips. The connecting chips include conductive materials piercing through the connecting chips. The control semiconductor chips and the connecting chips are bonded within a substantially same plane with a second resin layer. And the optical chips and the control semiconductor chips are electrically connected through the connecting chips.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.