Light-emitting diode structure and method for manufacturing the same

US8507938B2 · kind B2 · utility

Assignee

• Chi Mei Lighting Technology Corp. · TW

Inventors

• Kuo-Hui Yu · Tainan, TW
• Tsung-Hung Lu · Danei, TW
• Chang-Hsin Chu · Tainan, TW

Key dates

• Filing date: Apr 2, 2010
• Grant date: Aug 13, 2013
• Expiry date: Feb 9, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/84

Abstract

A light-emitting diode (LED) structure and a method for manufacturing the same are described. The light-emitting diode structure includes a p-type electrode, a bonding substrate, a p-type semiconductor layer, an active layer, an n-type semiconductor layer, an epitaxial growth substrate and an n-type electrode. The bonding substrate is disposed on the p-type electrode. The p-type semiconductor layer is disposed on the bonding substrate. The active layer is disposed on the p-type semiconductor layer. The n-type semiconductor layer is disposed on the active layer. The epitaxial growth substrate is disposed on the n-type semiconductor layer, wherein the epitaxial growth substrate includes an opening penetrating the epitaxial growth substrate. The n-type electrode is disposed in the opening and is electrically connected to the n-type semiconductor layer.