Light emitting device, method of fabricating the same and light emitting device package
US8507944B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 24, 2011 |
| Grant date | Aug 13, 2013 |
| Priority date | — |
| Expiry date | May 24, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed herein is a light emitting device including a first nitride semiconductor and a second nitride semiconductor, each of which includes a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, and a connection layer formed between the second conductivity-type semiconductor layer of the second nitride semiconductor and the first conductivity-type semiconductor layer of the first nitride semiconductor, wherein the first nitride semiconductor and the second nitride semiconductor are connected by the connection layer, and the light emitting device further comprises electrodes formed on at least a part of the second conductivity-type semiconductor layer of the first nitride semiconductor, at least a part of the first conductivity-type semiconductor layer of the second nitride semiconductor, and at least a part of the second conductivity-type semiconductor layer of the second nitride semiconductor. The light emitting device may be driven and emit light using AC power.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.