High voltage devices, systems, and methods for forming the high voltage devices
US8507988B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2010 |
| Grant date | Aug 13, 2013 |
| Priority date | — |
| Expiry date | Apr 21, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/153
Abstract
A high voltage (HV) device includes a gate dielectric structure over a substrate. The gate dielectric structure has a first portion and a second portion. The first portion has a first thickness and is over a first well region of a first dopant type in the substrate. The second portion has a second thickness and is over a second well region of a second dopant type. The first thickness is larger than the second thickness. A gate electrode is disposed over the gate dielectric structure. A metallic layer is over and coupled with the gate electrode. The metallic layer extends along a direction of a channel under the gate dielectric structure. At least one source/drain (S/D) region is disposed within the first well region of the first dopant type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.