Patent · US Active

Semiconductor device, method of fabricating the same, and semiconductor module and electronic system including the semiconductor device

US8507999B2 · kind B2 · utility

1Cited by
2References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 1, 2011
Grant dateAug 13, 2013
Priority date
Expiry dateNov 6, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D64/021

Abstract

A semiconductor device includes a substrate including a cell area and a peripheral area, the cell area having an active region defined by an isolation region, a cell gate structure below an upper surface of the substrate in the cell area, the cell gate crossing the active region, a bit line structure above an upper surface of the substrate in the cell area, the bit line structure including bit line offset spacers on at least two side surfaces thereof, and a peripheral gate structure above an upper surface of the substrate in the peripheral area, the peripheral gate structure including peripheral gate offset spacers and peripheral gate spacers on at least two side surfaces thereof.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.