Bipolar punch-through semiconductor device and method for manufacturing such a semiconductor device
US8508016B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 15, 2011 |
| Grant date | Aug 13, 2013 |
| Priority date | — |
| Expiry date | Aug 24, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D18/00
Abstract
A bipolar punch-through semiconductor device has a semiconductor substrate, which includes at least a two-layer structure, a first main side with a first electrical contact, and a second main side with a second electrical contact. One of the layers in the two-layer structure is a base layer of the first conductivity type. A buffer layer of the first conductivity type is arranged on the base layer. A first layer includes alternating first regions of the first conductivity type and second regions of the second conductivity type. The first layer is arranged between the buffer layer and the second electrical contact. The second regions are activated regions with a depth of at maximum 2 μm and a doping profile, which drops from 90% to 10% of the maximum doping concentration within at most 1 μm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.