Patent · US Active

Deposition and selective removal of conducting helplayer for nanostructure processing

US8508049B2 · kind B2 · utility

1Cited by

22References

28Claims

0Family size

Assignee

Smoltek AB · SE

Inventors

Jonas S. T. Berg · Hyssna, SE
Vincent Desmaris · Gothenburg, SE
Mohammad Shafiqul Kabir · Gothenburg, SE
Muhammad Amin Saleem · Gothenburg, SE
David Brud · Alvesta, SE

Key dates

Filing date	Feb 24, 2009
Grant date	Aug 13, 2013
Priority date	—
Expiry date	Mar 11, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for making one or more nanostructures is disclosed, the method comprising: depositing a conducting layer on an upper surface of a substrate; depositing a patterned layer of catalyst on the conducting layer; growing the one or more nanostructures on the layer of catalyst; and selectively removing the conducting layer between and around the one or more nanostructures. A device is also disclosed, comprising a substrate, wherein the substrate comprises one or more exposed metal islands separated by one or more insulating areas; a conducting helplayer disposed on the substrate covering at least some of the one or more exposed metal islands or insulating areas; a catalyst layer disposed on the conducting helplayer; and one or more nanostructures disposed on the catalyst layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.