Dynamic read channel calibration for non-volatile memory devices
US8510636B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 1, 2011 |
| Grant date | Aug 13, 2013 |
| Priority date | — |
| Expiry date | Nov 22, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03M13/19
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Embodiments of the invention describe a dynamic read reference voltage for use in reading data from non-volatile memory cells. In embodiments of the invention, the read reference voltage is calibrated as the non-volatile memory device is used. Embodiments of the invention may comprise of logic and or modules to read data from a plurality of non-volatile memory cells using a first read reference voltage level (e.g., an initial read reference voltage level whose value is determined by the non-volatile device manufacturer). An Error Checking and Correction (ECC) algorithm is performed to identify whether errors exist in the data as read using the first read reference voltage level. If errors in the data as read are identified, a pre-determined value is retrieved to adjust the first read reference voltage level to a second read reference voltage level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.