Patent · US Active

Pressure sensor with semiconductor pressure measuring transducer

US8511151B2 · kind B2 · utility

4Cited by
4References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 2, 2010
Grant dateAug 20, 2013
Priority date
Expiry dateJul 6, 2030

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01L19/04
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A pressure sensor, comprising: a semiconductor pressure measuring transducer having a measuring membrane and a circuit for transducing a deformation of the measuring membrane into a signal; a pressure transfer structure having a hydraulic path, which extends through a solid body between a first a second opening. The first opening is sealed by an isolating diaphragm, which is contactable with a pressure, in order to introduce the pressure to be measured into the hydraulic path. The hydraulic path opens, at the second opening, into a transducer chamber, in which the pressure measuring transducer is arranged and which is sealed by the measuring membrane of the pressure measuring transducer. The hydraulic path contains a transfer liquid; a filling element, which is arranged in the transducer chamber, in order to fill hollow spaces between metal walls of the transducer chamber and the semiconductor pressure measuring transducer. An insulator plate, which is arranged in the transducer chamber between the measuring membrane and a wall of the transducer chamber lying opposite the measuring membrane; wherein the insulator plate is affixed to the filling element or is embodied as one piece w…

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.