Gas cluster ion beam etching process for achieving target etch process metrics for multiple materials
US8512586B2 · kind B2 · utility
3Cited by
8References
20Claims
0Family size
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Key dates
| Filing date | Sep 1, 2011 |
| Grant date | Aug 20, 2013 |
| Priority date | — |
| Expiry date | Sep 1, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.