High temperature stable nanocrystalline SiGe thermoelectric material
US8512667B2 · kind B2 · utility
2Cited by
4References
12Claims
0Family size
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Key dates
| Filing date | Nov 15, 2010 |
| Grant date | Aug 20, 2013 |
| Priority date | — |
| Expiry date | Sep 28, 2031 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB22F2999/00
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method of forming a nanocomposite thermoelectric material having microstructural stability at temperatures greater than 1,000° C. The method includes creating nanocrystalline powder by cryomilling. The method is particularly useful in forming SiGe alloy powder.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.