Method for MEMS device fabrication and device formed
US8513043B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2012 |
| Grant date | Aug 20, 2013 |
| Priority date | — |
| Expiry date | Jan 13, 2032 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/0714
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention generally relates to methods for producing MEMS or NEMS devices and the devices themselves. A thin layer of a material having a lower recombination coefficient as compared to the cantilever structure may be deposited over the cantilever structure, the RF electrode and the pull-off electrode. The thin layer permits the etching gas introduced to the cavity to decrease the overall etchant recombination rate within the cavity and thus, increase the etching rate of the sacrificial material within the cavity. The etchant itself may be introduced through an opening in the encapsulating layer that is linearly aligned with the anchor portion of the cantilever structure so that the topmost layer of sacrificial material is etched first. Thereafter, sealing material may seal the cavity and extend into the cavity all the way to the anchor portion to provide additional strength to the anchor portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.