Method for the manufacturing of thin film photovoltaic converter device
US8513044B2 · kind B2 · utility
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Key dates
| Filing date | Jun 1, 2010 |
| Grant date | Aug 20, 2013 |
| Priority date | — |
| Expiry date | Jun 1, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
So as to improve efficiency of a thin-film photovoltaic converter device, during manufacturing of which an intermediate product module is manufactured, which comprises deposition of at least one positively doped, at least one intrinsic and at least one negatively doped silicon-based layer, the addressed intermediate product module is subjected to an annealing step during which the module is subjected to a temperature of between 100° C. to 200° C. during a time span of half an hour to four hours.
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