Gas cluster ion beam etching process for Si-containing and Ge-containing materials
US8513138B2 · kind B2 · utility
1Cited by
9References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 1, 2011 |
| Grant date | Aug 20, 2013 |
| Priority date | — |
| Expiry date | Sep 15, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3346
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and system for performing gas cluster ion beam (GCIB) etch processing of Si-containing material and/or Ge-containing material is described. In particular, the GCIB etch processing includes forming a GCIB that contains a halogen element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.