Photoelectric conversion device, production method thereof and imaging device
US8513651B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2010 |
| Grant date | Aug 20, 2013 |
| Priority date | — |
| Expiry date | Jul 22, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Provided is a photoelectric conversion device comprising an electrically conductive film, a photoelectric conversion film, and a transparent electrically conductive film, wherein the photoelectric conversion film contains a fullerene or a fullerene derivative and a photoelectric conversion material having an absorption spectrum satisfying at least either the following condition (A) or (B):λM1<λL1 and λM2<λL2 (A)λM1<λL1 and Δ|λM1−λL1|>Δ|λM2−λL2| (B)wherein λL1, λL2, λM1 and λM2 are the wavelength at an absorption intensity of ½ of the maximum absorption intensity in the wavelength range of from 400 to 800 nm, each of λL1 and λL2 represents the wavelength in a chloroform solution spectrum when the photoelectric conversion material is dissolved in chloroform, and each of λM1 and λM2 represents the wavelength in a thin-film absorption spectrum of the photoelectric conversion material alone, provided that λL1<λL2 and λM1<λM2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.