Photoelectric conversion element and solid-state imaging device
US8513657B2 · kind B2 · utility
2Cited by
2References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 8, 2011 |
| Grant date | Aug 20, 2013 |
| Priority date | — |
| Expiry date | Mar 3, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A photoelectric conversion element includes a pair of electrodes, a photoelectric conversion layer, a charge blocking layer, an intermediate layer. The photoelectric conversion layer contains an organic material between the electrodes. The charge blocking layer is disposed between the photoelectric conversion layer and one of the electrodes. The intermediate layer includes an organic compound disposed between the photoelectric conversion layer and the charge blocking layer and having a glass transition temperature of 200° C. or higher.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.