Thin film transistor having specified transmittance to light
US8513661B2 · kind B2 · utility
157Cited by
14References
8Claims
0Family size
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Key dates
| Filing date | Jan 20, 2009 |
| Grant date | Aug 20, 2013 |
| Priority date | — |
| Expiry date | Jan 20, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6734
Abstract
A first gate electrode (2) is formed on a substrate (1); a first gate insulating layer (3) is formed so as to cover the first gate electrode (2); a semiconductor layer (4) including an oxide semiconductor is formed on the first gate insulating layer (3); a second gate insulating layer (7) is formed on the semiconductor layer (4); a second gate electrode (8) having a thickness equal to or larger than a thickness of the first gate electrode (2) is formed on the second gate insulating layer (7); and a drain electrode (6) and a source electrode (5) are formed so as to be connected to the semiconductor layer (4).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.