Display device having an aluminum complex oxide on metal layer for improving corrosion resistance
US8513677B2 · kind B2 · utility
1Cited by
4References
3Claims
0Family size
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Key dates
| Filing date | Mar 16, 2006 |
| Grant date | Aug 20, 2013 |
| Priority date | — |
| Expiry date | Dec 11, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A thin film transistor substrate for a liquid crystal display device includes a substrate, a metal layer on the substrate, and an aluminum complex oxide layer on the metal layer. The aluminum complex oxide layer comprises at least one selected from the group consisting of zirconium, tungsten, chromium and molybdenum. A passivation layer is formed on the aluminum complex oxide layer through a dipping process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.