Patent · US Active

RF CMOS transistor design

US8513707B2 · kind B2 · utility

14Cited by

20References

16Claims

0Family size

Assignee

CAMBRIDGE SILICON RADIO LIMITED · GB

Inventor

Rainer Herberholz · Cambridge, GB

Key dates

Filing date	Nov 25, 2009
Grant date	Aug 20, 2013
Priority date	—
Expiry date	Nov 25, 2029

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/14
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An improved RF CMOS transistor design is described. Local, narrow interconnect lines, which are located substantially above the active area of the transistor, are each connected to either a source terminal or a drain terminal. The source and the drain terminal are arranged orthogonally to the local interconnect lines and each terminal is significantly wider than a local interconnect line. In an example, the local interconnect lines are formed in a first metal layer and the source and drain terminals are formed in one or more subsequent metal layers.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.