Patent · US Active

Gas-sensitive semiconductor device

US8513711B2 · kind B2 · utility

0Cited by

26References

18Claims

0Family size

Assignee

Robert Bosch GmbH · DE

Inventors

Denis Kunz · Untergruppenbach, DE
Markus Widenmeyer · Schenefeld, DE
Alexander Martin · Regensburg, DE

Key dates

Filing date	Sep 23, 2010
Grant date	Aug 20, 2013
Priority date	—
Expiry date	May 7, 2031

Classification

Technology area (CPC G)Physics
CPC primaryG01N27/4141
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A gas-sensitive semiconductor device having a semiconductive channel (10) which is delimited by a first (12) and a second (14) channel electrode, and having a gate electrode (16) which is associated with the channel and which cooperates with the channel in such a way that a change in conductivity of the channel (10) occurs as a response to an action of a gas. The gate electrode (16) and/or a gate insulation layer (20) which insulates the gate electrode from the channel, and/or a gate stack layer (18) which may be provided between the gate electrode and the channel have/has two surface sections (22, 24) which differ in their sensitivity to gases.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.