CMOS image sensor with non-contact structure

US8513721B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing International (Shanghai) Corporation · CN
• Semiconductor Manufacturing International (Beijing) Corporation · CN

Inventors

• Hong Zhu · Shanghai, CN
• Liwei Wu · Beijing, CN
• Jessy Xu · Shanghai, CN
• Samuel Leng · Shanghai, CN
• Celia Xin · Shanghai, CN
• Jim Yang · Shanghai, CN

Key dates

• Filing date: Oct 11, 2010
• Grant date: Aug 20, 2013
• Expiry date: Oct 11, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/8037

Abstract

A complementary metal oxide semiconductor (CMOS) image sensor device includes a capacitive coupled photodiode that is formed within a region of a semiconductor substrate. The photodiode receives an incident light and generates a corresponding electric charge. The CMOS image sensor device includes a reset transistor coupled to the photodiode for reverse biasing the photodiode with a predetermined voltage. The CMOS image sensor device further includes a buffer circuit and a capacitor, which is interposed between the photodiode and the buffer circuit. The capacitor is configured to transfer the electric charge to the buffer circuit. The buffer circuit may include an emitter follower or a source follower transistor.