Backside illumination semiconductor image sensor
US8513761B2 · kind B2 · utility
30Cited by
1References
21Claims
0Family size
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Key dates
| Filing date | Feb 1, 2010 |
| Grant date | Aug 20, 2013 |
| Priority date | — |
| Expiry date | Mar 8, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/196
Abstract
A backside illumination semiconductor image sensor, wherein each photodetection cell includes a semiconductor body of a first conductivity type of a first doping level delimited by an insulation wall, electron-hole pairs being capable in said body after a backside illumination; on the front surface side of said body, a ring-shaped well of the second conductivity type, this well delimiting a substantially central region having its upper portion of the first conductivity type of a second doping level greater than the first doping level; and means for controlling the transfer of charge carriers from said body to said upper portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.