Semiconductor device having a drain-gate isolation portion
US8513766B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2008 |
| Grant date | Aug 20, 2013 |
| Priority date | — |
| Expiry date | Aug 12, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/307
Abstract
An inventive semiconductor device includes a semiconductor layer, a source region provided in a surface layer portion of the semiconductor layer, a drain region provided in the surface of the semiconductor layer in spaced relation from the source region, a gate insulation film provided in opposed relation to a portion of the surface of the semiconductor layer present between the source region and the drain region, a gate electrode provided on the gate insulation film, and a drain-gate isolation portion provided between the drain region and the gate insulation film for isolating the drain region and the gate insulation film from each other in non-contact relation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.