Integrated silicon-based nonlinear photodetector
US8515216B2 · kind B2 · utility
1Cited by
2References
33Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 3, 2009 |
| Grant date | Aug 20, 2013 |
| Priority date | — |
| Expiry date | Mar 22, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/14
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed is a system including an integrated silicon-based structure including a microcavity configured to receive optical energy from an input beam carrying an optical signal and absorb the optical energy by a nonlinear multi-photon absorption process. For example, the multi-photon absorption process can be two-photon absorption (TPA). The integrated silicon-based structure further includes electrodes responsive to the nonlinear multi-photon absorption process in the microcavity for producing an electronic signal indicative of the optical signal. A related method is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.