Method of fabricating and transferring a micro device and an array of micro devices utilizing an intermediate electrically conductive bonding layer
US8518204B2 · kind B2 · utility
104Cited by
57References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2012 |
| Grant date | Aug 27, 2013 |
| Priority date | — |
| Expiry date | May 17, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T156/1153
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating and transferring a micro device and an array of micro devices to a receiving substrate are described. In an embodiment, an electrically insulating layer is utilized as an etch stop layer during etching of a p-n diode layer to form a plurality of micro p-n diodes. In an embodiment, an electrically conductive intermediate bonding layer is utilized during the formation and transfer of the micro devices to the receiving substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.