Patent · US Active

Proton-conducting structure and method for manufacturing the same

US8518595B2 · kind B2 · utility

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1References
4Claims
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Key dates

Filing dateSep 14, 2012
Grant dateAug 27, 2013
Priority date
Expiry dateSep 14, 2032

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02P70/50
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A proton-conducting structure that exhibits favorable proton conductivity in the temperature range of not lower than 100° C., and a method for manufacturing the same are provided. After a pyrophosphate salt containing Sn, Zr, Ti or Si is mixed with phosphoric acid, the mixture is maintained at a temperature of not less than 80° C. and not more than 150° C., and thereafter maintained at a temperature of not less than 200° C. and not more than 400° C. to manufacture a proton-conducting structure. The proton-conducting structure of the present invention has a core made of tin pyrophosphate, and a coating layer formed on the surface of the core, the coating layer containing Sn and O, and having a coordination number of O with respect to Sn of grater than 6.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.