Deposition method and method for manufacturing semiconductor device
US8518761B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 13, 2011 |
| Grant date | Aug 27, 2013 |
| Priority date | — |
| Expiry date | Jun 1, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An object is to provide a deposition method in which a gallium oxide film is formed by a DC sputtering method. Another object is to provide a method for manufacturing a semiconductor device using a gallium oxide film as an insulating layer such as a gate insulating layer of a transistor. An insulating film is formed by a DC sputtering method or a pulsed DC sputtering method, using an oxide target including gallium oxide (also referred to as GaOX). The oxide target includes GaOX, and X is less than 1.5, preferably more than or equal to 0.01 and less than or equal to 0.5, further preferably more than or equal to 0.1 and less than or equal to 0.2. The oxide target has conductivity, and sputtering is performed in an oxygen gas atmosphere or a mixed atmosphere of an oxygen gas and a rare gas such as argon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.