Semiconductor device and manufacturing method thereof
US8518781B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 18, 2012 |
| Grant date | Aug 27, 2013 |
| Priority date | — |
| Expiry date | Jul 18, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/117
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a manufacturing method thereof are provided. The fin semiconductor device includes a fin formed on a substrate and an insulating material layer formed on the substrate and surrounding the fin. The fin has a semiconductor layer that has a source region portion and a drain region portion. The fin includes a first channel control region, a second channel control region, and a channel region between the two channel control regions, all of which are positioned between the source region portion and the drain region portion. The two channel control regions may have the same conductivity type, different from the channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.