Process for masking and removal of residue from complex shapes

US8518832B1 · kind B1 · utility

Assignee

• WESTERN DIGITAL (FREMONT), LLC · US

Inventors

• Xiaoyu Yang · Hangzhou City, CN
• Xianzhong Zeng · Fremont, US
• Yan Chen · Chengdu, CN
• Yunhe Huang · Pleasanton, US
• Jinqiu Zhang · Fremont, US
• Yang Xiang · Taiyuan, CN
• Ching-Huang Lu · Taoyuan, TW

Key dates

• Filing date: Jun 27, 2011
• Grant date: Aug 27, 2013
• Expiry date: Aug 29, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31133
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A process is provided for etching a mask layer and removal of residue from a structure having an area sheltered from directional etching. The structure has a shape that forms a silhouette area obstructed from being etched by anisotropic bombardment originating from a first direction, and a mask formed over the mask layer over the structure; A first etch process removes at least a part of the mask layer and retains at least a part of mask layer in the sheltered area. A second etch process removes at least a part of the mask layer in the sheltered area by hydrogen based microwave plasma etching.