Nonvolatile memory device, nonvolatile memory device group, and manufacturing method thereof
US8519377B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 4, 2011 |
| Grant date | Aug 27, 2013 |
| Priority date | — |
| Expiry date | Oct 4, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
Abstract
A nonvolatile memory device group includes: (A) a first insulating layer; (B) a second insulating layer that has a first concavity and a second concavity communicating with the first concavity and having a width larger than that of the first concavity and that is disposed on the first insulating layer; (C) a plurality of electrodes that are disposed in the first insulating layer and the top surface of which is exposed from the bottom surface of the first concavity; (D) an information storage layer that is formed on the side walls and the bottom surfaces of the first concavity and the second concavity; and (E) a conductive material layer that is filled in a space surrounded with the information storage layer in the second concavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.