Semiconductor light-emitting element array including a semiconductor rod
US8519378B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 17, 2008 |
| Grant date | Aug 27, 2013 |
| Priority date | — |
| Expiry date | Apr 1, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/818
Abstract
Semiconductor surface emitting elements having a plurality of wavelengths being manufactured on a signal substrate through MOVPE selective growth. More specifically, provided is a semiconductor light emitting element array which comprises; a semiconductor crystal substrate; an insulating film disposed on a surface of the substrate, the insulating film being divided into two or more regions, each of which having two or more openings exposing the surface of the substrate; semiconductor rods extending from the surface of the substrate upward through the openings, the semiconductor rods each having an n-type semiconductor layer and a p-type semiconductor layer being laminated in its extending direction, thereby providing a p-n junction; a first electrode connected to the semiconductor crystal substrate; and a second electrode connected to upper portions of the semiconductor rods; wherein the heights of the semiconductor rods as measured from the substrate surface vary by each of the two or more regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.