Method of fabricating nitride-based semiconductor light-emitting device and nitride-based semiconductor light-emitting device
US8519416B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 9, 2009 |
| Grant date | Aug 27, 2013 |
| Priority date | — |
| Expiry date | Dec 16, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0137
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A nitride-based semiconductor light-emitting device capable of suppressing reduction of characteristics and a yield and method of fabricating the same is described. The method of fabricating includes the steps of forming a groove portion on a nitride-based semiconductor substrate by selectively removing a prescribed region of a second region of the nitride-based semiconductor substrate other than a first region corresponding to a light-emitting portion of a nitride-based semiconductor layer up to a prescribed depth and forming the nitride-based semiconductor layer having a different composition from the nitride-based semiconductor substrate on the first region and the groove portion of the nitride-based semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.